carrier concentrations #198
-
|
Dear Nakib, I have a question on carrier concentrations. I saw your discussion with other users about chemical potential. Since I am not going to dope the system, I have the same number for both enref and chempt. But I finally got the result that the system is n-doped, with n = 2.47e19 cm^-3. So I want to know how to set up the parameters for the result without doping. The files are as follows: Looking forward to your reply. Thanks. Best regards, |
Beta Was this translation helpful? Give feedback.
Replies: 1 comment 3 replies
-
|
Dear Jian Zheng, I took a look at your Above, you have set the chemical potential to the conduction band minimum. In other words, you have (strongly) n-doped the system. To get to the undoped (or, intrinsic) limit, you need to set the chemical potential in the middle of the band gap. (But there is a catch. This is silicon, and the DFT band gap is too small. You can mitigate this by using a scissor shift in A point to note: if you are going to put the chemical potential far away from the conduction and valence band edges, you have to make sure to use a large enough transport active Fermi window ( Best, |
Beta Was this translation helpful? Give feedback.
Dear Jian Zheng,
I took a look at your
input.nmlfile for elphbolt. Here's the relevant section:Above, you have set the chemical potential to the conduction band minimum. In other words, you have (strongly) n-doped the system. To get to the undoped (or, intrinsic) limit, you need to set the chemical potential in the middle of the band gap. (But there is a catch. This is silicon, and the DFT band gap is too small. You can mitigate this by…